SURFACE ETCHING TECHNOLOGIES FOR MONOCRYSTALLINE SILICON WAFER SOLAR CELLS

Ph.DDOCTOR OF PHILOSOPH

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc) of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production

Effect of Er-Rich Precipitates on Microstructure and Electrochemical Behavior of the Al–5Zn–0.03In Alloy

The effect of Er-rich precipitates on microstructure and electrochemical behavior of the Al–Zn–In anode alloy is investigated. The results showed that with the increase in Er content, the microstructure was refined, the amount of interdendritic precipitates gradually increased, and the morphology changed from discontinuous to continuous network gradually. With the addition of Er element, the self-corrosion potential of the Al–5Zn–0.03In–xEr alloy moved positively, the self-corrosion current density decreased, and the corrosion resistance increased. When the Er content was less than 1 wt.%, the addition of Er improved the dissolution state of the Al–5Zn–0.03In–xEr alloy, and increased the current efficiency of the Al–5Zn–0.03In–xEr alloy. When the Er content was more than 1 wt.%, the current efficiency was reduced. The major precipitate of the alloy was Al3Er. According to the element composition of Al3Er in the Al–Zn–In–Er alloy, the simulated-segregated-phase alloy was melted to explain the effect of Al3Er segregation on the electrochemical behavior of alloys, and the polarization curve and AC impedance spectrum of the simulated-segregated-phase alloy and the Al–Zn–In alloy were measured. The results showed that Al3Er was an anodic segregation phase in the Al–Zn–In–Er alloy, and the preferential dissolution of the segregation phase would occur in the alloy, but the Al3Er phase itself was passivated in the dissolution process, which inhibited the further activation of the dissolution reaction of the Al–Zn–In–Er alloy to a certain extent

Effect of Heat Treatment on Microstructural Evolution and Microhardness Change of Al-5Zn-0.03In-1Er Alloy

Adding an appropriate amount of Er element to Al-Zn-In alloys can improve the electrochemical performance of Al alloys; it is convenient to study the electrochemical behavior of the alloy in the rest of our work. However, Er segregation in solid solutions which reduced the comprehensive properties of alloys was difficult to reduce and there was no report on the homogenization of Al-Zn-In alloys. We found that the ultra-high temperature treatment (UHTT) can obviously reduce Er segregation. To explore the better homogenization treatment and the microstructure evolution of Al-5Zn-0.03In-1Er alloy after UHTT, we carried out a series of heat treatments on the alloy and characterized the microstructure of the alloy by optical microscopy (OM), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy spectrum analysis (EDS) and transmission electron microscopy (TEM). The results showed that the main element Er of the Al-Zn-In-Er was largely enriched in grain boundaries after UHTT; the distribution Zn and In was almost unchanged. The as-cast Al-Zn-In-Er alloy consisted mainly of α(Al) solid solution and Al3Er phase. As the temperature of UHTT increased and the treatment time prolonged, the precipitated phase dissolved into the matrix, and there were dispersed Al3Er particles in the crystal. The proper UHTT for reducing the interdendritic segregation of the alloy was 615 °C × 32 h, which was properly consistent with the results of the evolution of the statistical amount of interdendritic phase, the line scanning analysis and the microhardness. Moreover, the microhardness of the alloy after treatment of 615 °C × 32 h was obviously higher than that of the as-cast alloy because of the anchoring effect of Al3Er nanoparticles on the movement of dislocations

Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD

10.1109/JPHOTOV.2015.2397593IEEE Journal of Photovoltaics53705-71